Invention Grant
US07642019B2 Methods for monitoring and adjusting focus variation in a photolithographic process using test features printed from photomask test pattern images; and machine readable program storage device having instructions therefore 有权
使用从光掩模测试图案图像打印的测试特征来监测和调整光刻工艺中的焦点变化的方法; 以及具有指令的机器可读程序存储装置

  • Patent Title: Methods for monitoring and adjusting focus variation in a photolithographic process using test features printed from photomask test pattern images; and machine readable program storage device having instructions therefore
  • Patent Title (中): 使用从光掩模测试图案图像打印的测试特征来监测和调整光刻工艺中的焦点变化的方法; 以及具有指令的机器可读程序存储装置
  • Application No.: US11324739
    Application Date: 2006-01-03
  • Publication No.: US07642019B2
    Publication Date: 2010-01-05
  • Inventor: Ho-Chul Kim
  • Applicant: Ho-Chul Kim
  • Applicant Address: KR Suwon-Si
  • Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee Address: KR Suwon-Si
  • Agency: F.Chau & Associates, LLC
  • Main IPC: G03F7/207
  • IPC: G03F7/207 G01B11/00 G06G7/48
Methods for monitoring and adjusting focus variation in a photolithographic process using test features printed from photomask test pattern images; and machine readable program storage device having instructions therefore
Abstract:
Systems and methods are provided for detecting focus variation in a lithographic process using photomasks having test patterns adapted to print test features with critical dimensions that can be measured and analyzed to determine magnitude and direction of defocus from a best focus position of an exposure tool during the lithographic process.
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