Invention Grant
- Patent Title: Chemical vapor deposition reactor having multiple inlets
- Patent Title (中): 具有多个入口的化学气相沉积反应器
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Application No.: US11932293Application Date: 2007-10-31
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Publication No.: US07641939B2Publication Date: 2010-01-05
- Inventor: Heng Liu
- Applicant: Heng Liu
- Applicant Address: US CA San Jose
- Assignee: Bridgelux, Inc.
- Current Assignee: Bridgelux, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Haynes and Boone, LLP
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion.
Public/Granted literature
- US20080057197A1 CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS Public/Granted day:2008-03-06
Information query
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