Invention Grant
- Patent Title: Method for manufacturing absorber layers for solar cell
- Patent Title (中): 制造太阳能电池吸收层的方法
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Application No.: US10565975Application Date: 2004-05-27
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Publication No.: US07641937B2Publication Date: 2010-01-05
- Inventor: In-hwan Choi
- Applicant: In-hwan Choi
- Applicant Address: KR Seoul
- Assignee: In-Solar Tech Co., Ltd.
- Current Assignee: In-Solar Tech Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: KR10-2003-0051828 20030726; KR10-2004-0029221 20040427
- International Application: PCT/KR2004/001251 WO 20040527
- International Announcement: WO2005/010999 WO 20050203
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
The present invention relates to a process for producing CuInSe2 and CuIn1XGa,Se2 thin films used as an absorption layer for a solar cell such that they have a structure near to chemical equivalence ratio. The present invention provides a process for producing a thin film for a solar cell, comprising forming an InSe thin film on a substrate by Metal Organic Chemical Vapor Deposition using a [Me2In-(μSeMe)]2 precursor; forming a Cu2Se thin film on the InSe thin film by Metal Organic Chemical Vapor Deposition using a (hfac)Cu(DMB) precursor, and forming a CuInSe2 thin film on the Cu2Se thin film by Metal Organic Chemical Vapor Deposition using a [Me2In-(μSeMe)]2 precursor. Further, the process may further comprise forming a CuIn1,Ga,Se2 thin film on the CuInSe2 thin film by Metal Organic Chemical Vapor Deposition using a [Me2Ga-(μSeMe)]2 precursor.
Public/Granted literature
- US20060204659A1 Method for manufacturing absorber layers for solar cell Public/Granted day:2006-09-14
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