Invention Grant
US07641880B2 Room temperature synthesis of GaN nanopowder 失效
室温合成GaN纳米粉末

Room temperature synthesis of GaN nanopowder
Abstract:
In the direct production of GaN by the metathesis of Li3N and GaCl3 or GaBr3 or GaI3, the reaction rate and yields can be greatly enhanced by including diethyl ether in the reaction system.
Public/Granted literature
Information query
Patent Agency Ranking
0/0