Invention Grant
US07641776B2 System and method for increasing yield from semiconductor wafer electroplating
有权
用于提高半导体晶圆电镀产量的系统和方法
- Patent Title: System and method for increasing yield from semiconductor wafer electroplating
- Patent Title (中): 用于提高半导体晶圆电镀产量的系统和方法
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Application No.: US11078179Application Date: 2005-03-10
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Publication No.: US07641776B2Publication Date: 2010-01-05
- Inventor: Mohan Nagar , Shirish Shah
- Applicant: Mohan Nagar , Shirish Shah
- Applicant Address: US CA Milpitas
- Assignee: LSI Corporation
- Current Assignee: LSI Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Cochran Freund & Young LLC
- Agent William W. Cochran
- Main IPC: C25D7/00
- IPC: C25D7/00 ; C25D21/00 ; C25D5/00

Abstract:
A system and method increase yield from semiconductor wafer electroplating. The aspects include a semiconductor wafer, the semiconductor wafer comprising a plurality of die areas. A plating ring for holding the semiconductor wafer in position during electroplating is also included, the plating ring substantially surrounding a circumference of the semiconductor wafer and having a width that varies in order to avoid overlap near edge die areas of the semiconductor wafer.
Public/Granted literature
- US20060201802A1 System and method for increasing yield from semiconductor wafer electroplating Public/Granted day:2006-09-14
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