Invention Grant
- Patent Title: Doped aluminum nitride crystals and methods of making them
- Patent Title (中): 掺杂氮化铝晶体及其制备方法
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Application No.: US11633667Application Date: 2006-12-04
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Publication No.: US07641735B2Publication Date: 2010-01-05
- Inventor: Glen A. Slack , Leo J. Schowalter
- Applicant: Glen A. Slack , Leo J. Schowalter
- Applicant Address: US NY Green Island
- Assignee: Crystal IS, Inc.
- Current Assignee: Crystal IS, Inc.
- Current Assignee Address: US NY Green Island
- Agency: Goodwin Procter LLP
- Main IPC: C30B7/02
- IPC: C30B7/02
Abstract:
Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
Public/Granted literature
- US20070131160A1 Doped aluminum nitride crystals and methods of making them Public/Granted day:2007-06-14
Information query
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