Invention Grant
- Patent Title: Method and apparatus for growth of multi-component single crystals
- Patent Title (中): 用于生长多组分单晶的方法和装置
-
Application No.: US11660593Application Date: 2005-09-01
-
Publication No.: US07641733B2Publication Date: 2010-01-05
- Inventor: Partha Dutta
- Applicant: Partha Dutta
- Applicant Address: US NY Troy
- Assignee: Rensselaer Polytechnic Institute
- Current Assignee: Rensselaer Polytechnic Institute
- Current Assignee Address: US NY Troy
- Agency: Foley & Lardner LLP
- International Application: PCT/US2005/031044 WO 20050901
- International Announcement: WO2006/028868 WO 20060316
- Main IPC: C30B15/00
- IPC: C30B15/00 ; C30B21/06
Abstract:
A method and apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm−2 and a radial compositional variation of less than 1%.
Public/Granted literature
- US20080203361A1 Method and Apparatus for Growth of Multi-Component Single Crystals Public/Granted day:2008-08-28
Information query
IPC分类:
