Invention Grant
- Patent Title: Method of making a magnetoresistive reader structure
- Patent Title (中): 制造磁阻读取器结构的方法
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Application No.: US11965867Application Date: 2007-12-28
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Publication No.: US07640650B2Publication Date: 2010-01-05
- Inventor: Satoru Araki , Ying Hong , Wipul Jayasekara , Ming Jiang
- Applicant: Satoru Araki , Ying Hong , Wipul Jayasekara , Ming Jiang
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: G11B5/127
- IPC: G11B5/127 ; H04R31/00 ; G11B5/33

Abstract:
A method of making a magnetoresistive sensor includes defining a track width of a magnetoresistive element stack of the sensor. Further, processes of the method enable depositing of hard magnetic bias material on each side of the stack. These processes may permit both milling of excess depositions of the material outside of regions where the hard magnetic bias material is desired via use of a photoresist and making the material have a planar surface via chemical mechanical polishing, which also removes the material on top of the stack. The method includes removing excess material outside of the photoresist, wherein the excess material includes part of the hard bias layer, while a portion of the hard bias layer remains directly above the MR sensor stack.
Public/Granted literature
- US20090168253A1 METHOD OF MAKING A MAGNETORESISTIVE READER STRUCTURE Public/Granted day:2009-07-02
Information query
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