An etching device includes a chamber; a stage disposed in the chamber and on which a target substrate is loaded; a gas distribution unit disposed to face the stage in the chamber; a plurality of plasma generation modules disposed above the chamber; a gas supply unit that supplies gas into the chamber; a gas line connecting the gas supply unit and the plurality of plasma generation modules; and a plurality of gas inlet pipes each including an end connected to the plasma generation module and another end connected to the gas distribution unit.