- Patent Title: High mobility group-III nitride transistors with strained channels
-
Application No.: US17114307Application Date: 2020-12-07
-
Publication No.: US12159929B1Publication Date: 2024-12-03
- Inventor: Stacia Keller , Umesh K. Mishra
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: GATES & COOPER LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/10 ; H01L29/15 ; H01L29/20 ; H01L29/205 ; H01L29/66
Abstract:
An electronic device including a substrate a group III-V layer on or above the substrate, wherein the III-V layer has an in-plane lattice constant that is greater than that of gallium nitride or wherein the III-V layer is at least partially relaxed; and an active region including a coherently strained group III-V channel layer on or above the III-V layer; wherein electron mobility in the channel layer is increased by the strain. Structures with an in-plane lattice constant that is smaller than that of gallium nitride are used for increasing the hole mobility by strain.
Information query
IPC分类:
