A silicon carbide semiconductor device includes a silicon carbide substrate having a first principal surface and a second principal surface. The silicon carbide substrate includes a drift region, a body region, and a source region. A gate trench is provided on the first principal surface. The silicon carbide substrate further includes a first reduced-electric field region provided between a bottom surface and the second principal surface. The source region includes a first region and a second region, and the first region is interposed between a side surface and the second region. The silicon carbide semiconductor device further includes a contact electrode with an ohmic junction with the second region.