Invention Grant
- Patent Title: Semiconductor device with high-resistance polysilicon resistor formation method
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Application No.: US17575224Application Date: 2022-01-13
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Publication No.: US12159867B2Publication Date: 2024-12-03
- Inventor: Heuiseung Lee , Jungmun Jung
- Applicant: SK keyfoundry Inc.
- Applicant Address: KR Cheongju-si
- Assignee: SK keyfoundry Inc.
- Current Assignee: SK keyfoundry Inc.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2021-0078602 20210617
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/66 ; H01L29/78 ; H01L49/02
Abstract:
A semiconductor device polysilicon resistor formation method is provided. A third ion implantation and a fourth ion implantation are performed in a polysilicon resistor region, so that a high-resistance polysilicon resistor can be formed without an additional mask process.
Public/Granted literature
- US20220406771A1 SEMICONDUCTOR DEVICE WITH HIGH-RESISTANCE POLYSILICON RESISTOR FORMATION METHOD Public/Granted day:2022-12-22
Information query
IPC分类:
