Invention Grant
- Patent Title: Process flow for fabrication of cap metal over top metal with sinter before protective dielectric etch
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Application No.: US16707917Application Date: 2019-12-09
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Publication No.: US12159846B2Publication Date: 2024-12-03
- Inventor: Richard Allen Faust , Robert Martin Higgins , Anagha Shashishekhar Kulkarni , Jonathan Philip Davis , Sudtida Lavangkul , Andrew Frank Burnett
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Yudong Kim; Frank D. Cimino
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/8234
Abstract:
A method of forming a semiconductor device for improving an electrical connection. The semiconductor device includes a top metal layer. A protective dielectric layer is formed over the top metal layer. A sintering operation is performed while the top metal layer is covered by the protective dielectric layer. After the sintering operation, the protective dielectric layer is patterned to expose areas on the top metal layer for bond pads of the semiconductor device. A bond pad cap is formed on the top metal layer where exposed by the protective dielectric layer.
Public/Granted literature
- US20210005560A1 PROCESS FLOW FOR FABRICATION OF CAP METAL OVER TOP METAL WITH SINTER BEFORE PROTECTIVE DIELECTRIC ETCH Public/Granted day:2021-01-07
Information query
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