Invention Grant
- Patent Title: Semiconductor package with non-uniformly distributed vias
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Application No.: US17877177Application Date: 2022-07-29
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Publication No.: US12159829B2Publication Date: 2024-12-03
- Inventor: Sergey Yuferev , Robert Fehler , Petteri Palm
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP18192833 20180905
- Main IPC: H01L23/522
- IPC: H01L23/522 ; G06F30/394 ; G06F30/398 ; H01L21/768 ; H01L23/00 ; H01L23/528

Abstract:
In an embodiment, a semiconductor package includes a semiconductor device embedded in an insulating layer and having a first contact pad at a first surface of the semiconductor device. An outer contact pad is positioned on a lower surface of the insulating layer. A vertical redistribution structure electrically couples the first contact pad to the outer contact pad. The first contact pad has a plurality of first via sites. A first subset of the first via sites is occupied by first vias and a second subset of the first via sites remains unoccupied and forms a first via-free zone, such that the first vias are non-uniformly distributed over the first contact pad.
Public/Granted literature
- US20220367350A1 SEMICONDUCTOR PACKAGE WITH NON-UNIFORMLY DISTRIBUTED VIAS Public/Granted day:2022-11-17
Information query
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