Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17746492Application Date: 2022-05-17
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Publication No.: US12159810B2Publication Date: 2024-12-03
- Inventor: Akinori Sakakibara , Takanori Kawashima , Shingo Tsuchimochi , Shoichiro Omae
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/13 ; H01L23/373 ; H01L23/498 ; H01L25/065 ; H01L25/07

Abstract:
A semiconductor device includes a first insulating circuit board, a semiconductor element on the first insulating circuit board, and an encapsulating body. The first insulating circuit board includes a first insulating substrate, and a first inner conductor layer, and a first outer conductor layer. The first inner conductor layer is electrically connected to a first electrode of the semiconductor element inside of the encapsulating body. The first outer conductor layer is exposed from a surface of the encapsulating body. The first inner conductor layer has a first thin-wall portion a thickness of which reduces toward an outer side, along an outer peripheral edge of the first inner conductor layer with a first width. The first outer conductor layer (i) does not have or (ii) has a second thin-wall portion along the outer peripheral edge of the first outer conductor layer with a second width.
Public/Granted literature
- US20220278006A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-09-01
Information query
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