3D NOR flash memory devices having vertically stacked memory cells are provided. In one aspect, a memory device includes: a word line/bit line stack with alternating word lines and bit lines separated by dielectric layers disposed on a substrate; a channel that extends vertically through the word line/bit line stack; and a floating gate stack surrounding the channel, wherein the floating gate stack is present between the word lines and the channel, and wherein the bit lines are in direct contact with both the channel and the floating gate stack. Techniques for configuring the memory device for neuromorphic computing are provided, as are methods of fabricating the memory device.