A semiconductor device includes: a substrate, including a memory array region and a peripheral region; a first interlayer insulation layer and the second interlayer insulation layer which are formed on the substrate in the memory array region and the peripheral region, the first interlayer insulation layer and the second interlayer insulation layer being arranged at intervals along a direction perpendicular to the substrate; a columnar capacitor array, including columnar capacitors arranged at intervals, and the columnar capacitors being formed in the first interlayer insulation layer and the second interlayer insulation layer in the memory array region; and a contact structure, formed in the first interlayer insulation layer and the second interlayer insulation layer in the peripheral region.