Invention Grant
- Patent Title: High voltage stacked transistor amplifier
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Application No.: US17219118Application Date: 2021-03-31
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Publication No.: US12113484B2Publication Date: 2024-10-08
- Inventor: Wayne Mack Struble , Shamit Som , Kohei Fujii , Walter Nagy
- Applicant: MACOM Technology Solutions Holdings, Inc.
- Applicant Address: US MA Lowell
- Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
- Current Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
- Current Assignee Address: US MA Lowell
- Agency: Perilla Knox & Hildebrandt LLP
- Agent Jason M. Perilla
- Main IPC: H03F1/22
- IPC: H03F1/22 ; H03F3/195

Abstract:
Various aspects of integrated amplifiers, layouts for the integrated amplifiers, and packaged arrangements of the amplifiers are described. In one example, an amplifier includes an amplifier cell, and a biasing network coupled to the common gate transistor in the amplifier cell. The amplifier cell includes a common source transistor and a common gate transistor in a cascode arrangement, where at least one of the common source transistor and the common gate transistor comprises a field plate. Among other advantages, the amplifiers described herein can be biased with relatively high voltages and still operate like a single a common source transistor, without sacrificing reliability, performance, or requiring additional off-chip components, such as biasing networks of resistors and inductors.
Public/Granted literature
- US20220321062A1 HIGH VOLTAGE STACKED TRANSISTOR AMPLIFIER Public/Granted day:2022-10-06
Information query
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