Invention Grant
- Patent Title: Method of manufacturing integrated circuit device using a metal-containing photoresist composition
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Application No.: US16996372Application Date: 2020-08-18
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Publication No.: US12112948B2Publication Date: 2024-10-08
- Inventor: Chawon Koh , Soyeon Yoo , Sooyoung Choi , Tsunehiro Nishi , Kwangsub Yoon , Brian Cardineau , Kumagai Tomoya
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.,Inpria Corporation,Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.,Inpria Corporation,Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee Address: KR; US OR Corvallis; JP Kanagawa
- Agency: Myers Bigel, P.A.
- Main IPC: G03F7/38
- IPC: G03F7/38 ; G03F7/004 ; H01L21/027
Abstract:
In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.
Public/Granted literature
- US20220059345A1 METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING A METAL-CONTAINING PHOTORESIST COMPOSITION Public/Granted day:2022-02-24
Information query
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