A semiconductor storage device includes a circuit, a first plurality of conductive layers arranged along a first direction, extending along a second direction, and including first through third layers, the first layer between the second and third layers, a second plurality of conductive layers including fourth through sixth layers corresponding to the first through third layers and separated therefrom, a semiconductor layer extending between the first and second pluralities, and a charge storage layer between the semiconductor layer and the first and second pluralities. The circuit applies, in a verification operation of a write operation on the first conductive layer, a verification voltage to the first layer, a voltage smaller than the verification voltage to the fourth layer, a read voltage larger than the verification voltage to the second and fifth conductive layers, and a second voltage smaller than the read voltage to the third or sixth conductive layer.