A laser diode chip is described, comprising including:



an n-type semiconductor region, a p-type semiconductor region, and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, an n-type contact and a p-type contact,
at least one heating element arranged on a side of the laser diode chip facing the p-type semiconductor region, the heating element functioning as a resistance heater, and
at least one metallic seed layer, wherein the heating element comprises a part of the seed layer, and wherein the p-type contact is arranged on a further part of the seed layer.