Invention Grant
- Patent Title: Semiconductor device and manufacturing method therefor
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Application No.: US17388179Application Date: 2021-07-29
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Publication No.: US12080673B2Publication Date: 2024-09-03
- Inventor: Tatsuya Kitagawa , Shin Uegaki , Masao Akiyoshi , Masaaki Taruya , Dai Yoshii , Kazuhiro Tada
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Agent Richard C. Turner
- Priority: JP 21023030 2021.02.17
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/321 ; H01L21/56 ; H01L23/31 ; H01L23/495

Abstract:
The semiconductor device includes: a semiconductor element including a body portion formed in a plate shape, a protection film provided at an outer periphery on one surface of the body portion, and a metal thin film provided adjacently to an inner side of the protection film on the one surface of the body portion; a metal member joined to a surface of the metal thin film on a side opposite to the body portion, by solder; and a mold resin sealing the semiconductor element and the metal member, wherein the surface of the metal thin film on the side opposite to the body portion has, on at least a part of an outer periphery thereof, a projection portion projecting from the surface of the metal thin film, and the solder is not provided on an outer peripheral side from a top of the projection portion.
Public/Granted literature
- US20220262761A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2022-08-18
Information query
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