Invention Grant
- Patent Title: Three-dimensional memory array with local line selector
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Application No.: US18308031Application Date: 2023-04-27
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Publication No.: US12035534B2Publication Date: 2024-07-09
- Inventor: Chen-Jun Wu , Yu-Wei Jiang , Sheng-Chih Lai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- The original application number of the division: US17168317 2021.02.05
- Main IPC: H10B43/35
- IPC: H10B43/35 ; H01L23/522 ; H10B41/27 ; H10B41/35 ; H10B43/27

Abstract:
The present disclosure relates to an integrated chip including a three-dimensional memory array. The three-dimensional memory array includes a first local line and a second local line that are elongated vertically, a first memory cell extending between the first local line and the second local line, and a second memory cell directly under the first memory cell, extending between the first local line and the second local line, and coupled in parallel with the first memory cell. The first memory cell is coupled to a first word line and the second memory cell is coupled to a second word line. The first word line and the second word line are elongated horizontally. A first global line is disposed at a first height and is elongated horizontally. A first selector extends vertically from the first local line to the first global line.
Public/Granted literature
- US20230262985A1 THREE-DIMENSIONAL MEMORY ARRAY WITH LOCAL LINE SELECTOR Public/Granted day:2023-08-17
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