Invention Grant
- Patent Title: Barrier layer on a piezoelectric-device pad
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Application No.: US17577715Application Date: 2022-01-18
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Publication No.: US12035104B2Publication Date: 2024-07-09
- Inventor: Chih-Ming Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H04R25/00
- IPC: H04R25/00 ; H04R17/00 ; H04R31/00 ; H10N30/06 ; H10N30/87 ; H10N30/88

Abstract:
Various embodiments of the present disclosure are directed towards an integrated circuit (IC) chip in which a pad barrier layer caps a pad of a piezoelectric device. The pad barrier layer is configured to block hydrogen ions and/or other errant materials from diffusing to the piezoelectric layer. Absent the pad barrier layer, hydrogen ions from hydrogen-ion containing processes performed after forming the pad may diffuse to the piezoelectric layer along a via extending from the pad to the piezoelectric device. By blocking diffusion of hydrogen ions and/or other errant materials to the piezoelectric device, the pad barrier layer may prevent delamination and breakdown of the piezoelectric layer. Hence, the pad barrier layer may prevent failure of the piezoelectric device.
Public/Granted literature
- US20230037116A1 BARRIER LAYER ON A PIEZOELECTRIC-DEVICE PAD Public/Granted day:2023-02-02
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