Invention Grant
- Patent Title: High electron mobility transistor
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Application No.: US17200916Application Date: 2021-03-15
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Publication No.: US12034071B2Publication Date: 2024-07-09
- Inventor: Yang Du , Shin-Chen Lin , Chia-Ching Huang
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agent Winston Hsu
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/765 ; H01L23/31 ; H01L29/20 ; H01L29/205 ; H01L29/40 ; H01L29/66
Abstract:
A high electron mobility transistor includes a substrate, a semiconductor channel layer, a semiconductor barrier layer, a gate field plate, a source electrode, at least one first field plate, and a second field plate. The gate field plate is disposed on the semiconductor barrier layer. The source electrode is disposed on one side of the gate field plate, and the first field plate is disposed on the other side of the gate field plate and laterally spaced apart from the gate field plate. The second field plate covers the gate field plate and the first field plate and is electrically connected to the source electrode, where the area of the second field plate is larger than the sum of the area of the gate field plate and the area of the first field plate when perceived from a top-down perspective.
Public/Granted literature
- US20220293779A1 HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF Public/Granted day:2022-09-15
Information query
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