There is provided a solid-state imaging device that is capable of suppression of color mixing caused by a pixel for near-infrared light and securement of a saturation charge amount of a pixel for visible light where the pixels are formed in a same substrate. The solid-state imaging device includes: a substrate; first to third photoelectric conversion units; infrared absorbing filters; first to third color filters; a first element isolation unit between the first and second photoelectric conversion units; and a second element isolation unit disposed between the second and third photoelectric conversion units, in which a cross-sectional area of the first element isolation unit along a direction in which the first and second photoelectric conversion units are aligned is larger than a cross-sectional area of the second element isolation unit along a direction in which the second and third photoelectric conversion units are aligned.