Invention Grant
- Patent Title: Thin film resistor
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Application No.: US18141300Application Date: 2023-04-28
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Publication No.: US12034003B2Publication Date: 2024-07-09
- Inventor: Hung-Chih Yu , Chien-Mao Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01C7/00 ; H01C17/14 ; H01L21/8238 ; H01L27/01 ; H01L49/02
Abstract:
A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material.
Public/Granted literature
- US20230268340A1 NOVEL THIN FILM RESISTOR Public/Granted day:2023-08-24
Information query
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