Invention Grant
- Patent Title: Electrostatic discharge protection device
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Application No.: US17472057Application Date: 2021-09-10
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Publication No.: US12033999B2Publication Date: 2024-07-09
- Inventor: Qian Xu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN 2010717110.5 2020.07.23
- Main IPC: H01L27/02
- IPC: H01L27/02
Abstract:
Provided is an electrostatic discharge protection device, including: a darlington structure formed in a substrate, and a diode string formed in the substrate and including a plurality of diodes connected in series. A first end of the darlington structure is connected to a first voltage, and a second end of the darlington structure is connected to a second voltage. An anode of the diode string is connected to a third end of the darlington structure. A cathode of the diode string is connected to the second voltage.
Public/Granted literature
- US20220028853A1 ELECTROSTATIC DISCHARGE PROTECTION DEVICE Public/Granted day:2022-01-27
Information query
IPC分类:
