- Patent Title: Three-dimensional memory devices and methods for forming the same
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Application No.: US17384116Application Date: 2021-07-23
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Publication No.: US12033957B2Publication Date: 2024-07-09
- Inventor: Zhong Zhang , Di Wang , Wenxi Zhou
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H10B41/27 ; H10B43/27
Abstract:
In certain aspects, a three-dimensional (3D) memory device includes a plurality of channel structures in a first region, a staircase structure in a second region, and a word line extending in the first region and the second region. The first region and the second region are arranged along a first direction. The word line is discontinuous in the first direction between the first region and the second region.
Public/Granted literature
- US20220399285A1 THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME Public/Granted day:2022-12-15
Information query
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