Invention Grant
- Patent Title: Interconnect structure
-
Application No.: US17808300Application Date: 2022-06-22
-
Publication No.: US12033956B2Publication Date: 2024-07-09
- Inventor: Ting-Cih Kang , Hsih-Yang Chiu
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: CKC & Partners Co., LLC
- The original application number of the division: US17105480 2020.11.25
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/522 ; H01L23/552

Abstract:
An interconnect structure includes first, second, and third insulating layers, first, second, and third conductive lines, and first, second, third, and fourth conductive vias. The first conductive line is embedded in the first insulating layer. The second conductive line is embedded in the second insulating layer and comprises a first portion, a second portion, and a third portion. The third conductive line is embedded in the third insulating layer. The first and second conductive via are embedded in the first insulating layer. The third and fourth conductive via are embedded in the second insulating layer. A first cross-sectional area surrounded by the first conductive line, the first conductive via, the second conductive via, the first portion, and the second portion is substantially equal to a second cross-sectional area surrounded by the first portion, the third portion, the third conductive via, the fourth conductive via, and the third conductive line.
Public/Granted literature
- US20220320009A1 INTERCONNECT STRUCTURE Public/Granted day:2022-10-06
Information query
IPC分类: