Invention Grant
- Patent Title: Semiconductor structures and methods for forming the same
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Application No.: US17432191Application Date: 2021-03-10
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Publication No.: US12033933B2Publication Date: 2024-07-09
- Inventor: Kaimin Lv
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2010279542.2 2020.04.10
- International Application: PCT/CN2021/079980 2021.03.10
- International Announcement: WO2021/203900A 2021.10.14
- Date entered country: 2021-08-19
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L23/00

Abstract:
The present disclosure relates to the technical field of semiconductor packaging, and discloses a semiconductor structure and a method for forming the same. The method includes: providing a chip, the chip having interconnect structures on its surface, the top of the interconnect structures having an exposed fusible portion; providing a substrate, the substrate having conductive structures on its surface; patterning the conductive structures so that edges of the conductive structures have protrusions; combining the chip with the substrate.
Public/Granted literature
- US20230118163A1 SEMICONDUCTOR STRUCTURES AND METHODS FOR FORMING THE SAME Public/Granted day:2023-04-20
Information query
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