Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17952659Application Date: 2022-09-26
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Publication No.: US12033704B2Publication Date: 2024-07-09
- Inventor: Junya Matsuno , Kenro Kubota , Masato Dome , Kensuke Yamamoto , Kei Shiraishi , Kazuhiko Satou , Ryo Fukuda , Masaru Koyanagi
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP 20157763 2020.09.18
- Main IPC: G11C16/32
- IPC: G11C16/32 ; G11C16/04 ; G11C16/08 ; G11C16/26 ; H10B69/00

Abstract:
A semiconductor device includes a first circuit configured to receive a first signal, and output a first voltage to a first node in accordance with a voltage of the first signal being at a first level and output a second voltage to the first node in accordance with the voltage of the first signal being at a second level, the first voltage being higher than the second voltage. A second circuit is coupled to the first node and is configured to latch data based on a voltage of the first node; and a third circuit is coupled to the first node and is configured to output a third voltage to the first node while the first circuit is outputting the first voltage to the first node, and to output a fourth voltage to the first node while the first circuit is outputting the second voltage to the first node, the third voltage being lower than the first voltage, and the fourth voltage being higher than the second voltage.
Public/Granted literature
- US20230018613A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-01-19
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