Invention Grant
- Patent Title: Method for adjusting margin, circuit for adjusting margin and memory
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Application No.: US17854273Application Date: 2022-06-30
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Publication No.: US12033685B2Publication Date: 2024-07-09
- Inventor: Biao Cheng
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN 2210247132.9 2022.03.14
- Main IPC: G11C11/4076
- IPC: G11C11/4076 ; G11C29/02 ; G11C7/04 ; G11C7/22 ; G11C29/50

Abstract:
A method for adjusting margin, a circuit for adjusting margin, and a memory are provided. The method is applicable for a memory including a plurality of delay sub-circuits. The method includes: determining a voltage parameter and a temperature parameter, obtaining a target delay value by performing calculation on the voltage parameter and the temperature parameter through a preset time margin model; and adjusting a time margin of the memory by controlling working states of the plurality of delay sub-circuits according to the target delay value.
Public/Granted literature
- US20230290401A1 METHOD FOR ADJUSTING MARGIN, CIRCUIT FOR ADJUSTING MARGIN AND MEMORY Public/Granted day:2023-09-14
Information query
IPC分类: