Invention Grant
- Patent Title: Imaging element and imaging apparatus
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Application No.: US17638318Application Date: 2020-09-03
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Publication No.: US12028612B2Publication Date: 2024-07-02
- Inventor: Yusuke Murakawa , Hideaki Togashi , Yoshito Nagashima , Akira Furukawa , Yoshihiro Ando , Yasumasa Akutagawa , Taku Minoda , Hiroki Iwashita , Takahito Niwa , Sho Nishida , Mikio Ishimaru
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION , SONY GROUP CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: Sony Semiconductor Solutions Corporation,Sony Group Corporation
- Current Assignee: Sony Semiconductor Solutions Corporation,Sony Group Corporation
- Current Assignee Address: JP Kanagawa; JP Tokyo
- Agency: Sheridan Ross PC
- Priority: JP 19162545 2019.09.06
- International Application: PCT/JP2020/033385 2020.09.03
- International Announcement: WO2021/045139A 2021.03.11
- Date entered country: 2022-02-25
- Main IPC: H04N23/67
- IPC: H04N23/67 ; H01L27/146 ; H04N25/704

Abstract:
An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.
Public/Granted literature
- US20220311943A1 IMAGING ELEMENT AND IMAGING APPARATUS Public/Granted day:2022-09-29
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