Invention Grant
- Patent Title: Acknowledgment information with reduced redundancies
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Application No.: US17448332Application Date: 2021-09-21
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Publication No.: US12028173B2Publication Date: 2024-07-02
- Inventor: Aris Papasakellariou
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Main IPC: H04L1/18
- IPC: H04L1/18 ; H04L1/1812 ; H04L1/1867

Abstract:
Methods and apparatuses for acknowledgement information with reduced redundancies. A method for a user equipment (UE) to provide a number of first hybrid automatic repeat request acknowledgement (HARQ-ACK) information bits includes determining a number of second HARQ-ACK information bits based on a HARQ-ACK codebook. The number of second HARQ-ACK information bits is larger than a first predetermined number and smaller than a second predetermined number. The first and second predetermined numbers are consecutive in a set of predetermined numbers. The method further includes determining the number of first HARQ-ACK information bits by appending a number of bits to the number of second HARQ-ACK information bits. The number of bits is equal to a difference between the second predetermined number and the number of second HARQ-ACK information bits. The method further includes transmitting an uplink channel with the number of first HARQ-ACK information bits.
Public/Granted literature
- US20220116157A1 ACKNOWLEDGMENT INFORMATION WITH REDUCED REDUNDANCIES Public/Granted day:2022-04-14
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