Invention Grant
- Patent Title: Hybrid power amplifier with GaN-on-Si and GaN-on-SiC circuits
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Application No.: US17117332Application Date: 2020-12-10
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Publication No.: US12028022B2Publication Date: 2024-07-02
- Inventor: Prity Kirit Patel
- Applicant: MACOM Technology Solutions Holdings, Inc.
- Applicant Address: US MA Lowell
- Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
- Current Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
- Current Assignee Address: US MA Lowell
- Agency: Perilla Knox & Hildebrandt LLP
- Agent Jason M. Perilla
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H01L23/66 ; H03F3/195 ; H03F3/24
Abstract:
A power amplifier, such as a radio-frequency (RF) Doherty power amplifier, for amplifying an input signal to an output signal is disclosed. The power amplifier includes a peaking amplifier circuit, where the peaking amplifier circuit is formed in gallium nitride materials on a silicon substrate. The power amplifier further includes a main amplifier circuit, where the main amplifier circuit is formed in gallium nitride materials on a silicon carbide substrate.
Public/Granted literature
- US20220190785A1 HYBRID POWER AMPLIFIER WITH GAN-ON-SI AND GAN-ON-SIC CIRCUITS Public/Granted day:2022-06-16
Information query
IPC分类:
