Invention Grant
- Patent Title: Radiation hardened thin-film transistors
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Application No.: US18195982Application Date: 2023-05-11
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Publication No.: US12027630B2Publication Date: 2024-07-02
- Inventor: Minseo Park , Michael C. Hamilton , Shiqiang Wang , Kosala Yapa Bandara
- Applicant: Auburn University
- Applicant Address: US AL Auburn
- Assignee: Auburn University
- Current Assignee: Auburn University
- Current Assignee Address: US AL Auburn
- Agency: Bradley Arant Boult Cummings LLP
- Agent Stephen H. Hall; Ryan J. Letson
- The original application number of the division: US16457284 2019.06.28
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/42 ; H01L21/477 ; H01L21/768
Abstract:
A thin-film transistor comprises an annealed layer comprising crystalline zinc oxide. A passivation layer is adjacent to the thin-film transistor. The passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer. The annealed layer has a thickness and threshold displacement energies after it has been annealed such that: a) a difference between a transfer characteristic value of the thin-film transistor before and after the dose is less than a first threshold; and b) a difference between a transistor output characteristic value of the thin-film before and after the dose is less than a second threshold. The thresholds are based on a desired performance of the thin-film transistor.
Public/Granted literature
- US20240038897A1 RADIATION HARDENED THIN-FILM TRANSISTORS Public/Granted day:2024-02-01
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