Invention Grant
- Patent Title: Method for fabricating semiconductor device
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Application No.: US17397482Application Date: 2021-08-09
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Publication No.: US12027368B2Publication Date: 2024-07-02
- Inventor: Yu-Tien Shen , Chih-Kai Yang , Hsiang-Ming Chang , Chun-Yen Chang , Ya-Hui Chang , Wei-Ting Chien , Chia-Cheng Chen , Liang-Yin Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/02 ; H01L21/28 ; H01L21/3213 ; H01L29/66
Abstract:
A method for forming a semiconductor device is provided. The method for forming a semiconductor device is provided. The method includes coating a photoresist film over a target layer; performing a lithography process to pattern the photoresist film into a photoresist layer; performing a directional ion bombardment process to the photoresist layer, such that a carbon atomic concentration in the photoresist layer is increased; and etching the target layer using the photoresist layer as an etch mask.
Public/Granted literature
- US20220344153A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2022-10-27
Information query
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