A plasma processing apparatus includes a vacuum-exhaustible processing container, an electrode installed in the processing container, a plurality of power feeding portions connected to a peripheral portion of a back surface of the electrode, a high-frequency power supply configured to supply high-frequency power to the electrode through the plurality of power feeding portions, and a control unit. The control unit is configured to control the plasma processing apparatus to periodically apply the high-frequency power to each of the plurality of power feeding portions.