A method of fabricating a semiconductor device comprises forming backside power rails in a dielectric layer arranged above a backside interlayer dielectric (BILD) layer or a semiconductor layer, forming a trench that extends through the BILD layer or the semiconductor layer and partly through the dielectric layer between the backside power rails, depositing a plurality of layers to form a backside metal-insulator-metal (MIM) capacitor in the trench, and forming a first contact to a first metal layer of the plurality of layers. Forming the first contact comprises forming first recesses in a second metal layer of the plurality of layers, and filling the first recesses with an insulative material. The method further comprises forming a second contact to the second metal layer. Forming the second contact comprises forming second recesses in the first metal layer, and filling the second recesses with the insulative material.