Invention Grant
- Patent Title: Semiconductor device with magnetic tunnel junctions
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Application No.: US17346855Application Date: 2021-06-14
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Publication No.: US11980040B2Publication Date: 2024-05-07
- Inventor: Tai-Yen Peng , Tsung-Hsien Chang , Yu-Shu Chen , Chih-Yuan Ting , Jyu-Horng Shieh , Chung-Te Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H10B61/00
- IPC: H10B61/00 ; H10N50/01 ; H10N50/10 ; G11C11/16

Abstract:
A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.
Public/Granted literature
- US20210313396A1 Semiconductor Device With Magnetic Tunnel Junctions Public/Granted day:2021-10-07
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