Invention Grant
- Patent Title: Semiconductor structure and method of manufacture
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Application No.: US18123597Application Date: 2023-03-20
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Publication No.: US11980038B2Publication Date: 2024-05-07
- Inventor: Chung-Liang Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H10B53/30
- IPC: H10B53/30 ; H01L25/00 ; H01L25/065 ; H01L25/18
Abstract:
A semiconductor structure and method for forming the semiconductor are provided. The semiconductor structure includes a first electrode comprising a first portion, a second portion, and a sheet portion connecting the first portion to the second portion. A ferroelectric material is over the sheet portion. A second electrode is over the ferroelectric material.
Public/Granted literature
- US20230232636A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE Public/Granted day:2023-07-20
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