Invention Grant
- Patent Title: Pixel sensors and methods of forming the same
-
Application No.: US18152369Application Date: 2023-01-10
-
Publication No.: US11978751B1Publication Date: 2024-05-07
- Inventor: Li-Wen Huang , Chung-Liang Cheng , Ping-Hao Lin , Kuo-Cheng Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An electrode controls transmittance of a blocking layer over a photodiode of a pixel sensor (e.g., a photodiode of a small pixel detector) by changing oxidation of a metal material included in the blocking layer. By using the electrode to adjust transmittance of the blocking layer, pixel sensors for different uses and/or products may be produced using a single manufacturing process. As a result, power and processing resources are conserved that otherwise would have been expended in switching manufacturing processes. Additionally, production time is decreased (e.g., by eliminating downtime that would otherwise have been used to reconfigure fabrication machines.
Public/Granted literature
- US11948954B1 Pixel sensors and methods of forming the same Public/Granted day:2024-04-02
Information query
IPC分类: