Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic

Invention Grant

US11978639B2 Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic 有权

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Patent Title: Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic
Application No.: US18201061

Application Date: 2023-05-23
Publication No.: US11978639B2

Publication Date: 2024-05-07
Inventor: Fee Li Lie , Dongbing Shao , Robert C. Wong , Yongan Xu
Applicant: Tessera LLC
Applicant Address: US CA San Jose
Assignee: Tessera LLC
Current Assignee: Tessera LLC
Current Assignee Address: US CA San Jose
Agency: HALEY GUILIANO LLP
Main IPC: H01L21/308
IPC: H01L21/308 ; H01L21/033 ; H01L21/3065 ; H01L21/311 ; H01L21/8234 ; H01L27/088 ; H01L29/66 ; H01L29/78 ; H10B10/00

Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic

Abstract:

First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.

Public/Granted literature

US20240079247A1 TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RANDOM ACCESS MEMORY (SRAM) AND DENSE LOGIC Public/Granted day:2024-03-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/308	.......应用掩膜的（H01L21/3063，H01L21/3065优先）