Invention Grant
- Patent Title: Bulk acoustic wave resonator and manufacturing method therefor
-
Application No.: US16968926Application Date: 2019-02-02
-
Publication No.: US11949397B2Publication Date: 2024-04-02
- Inventor: Wei Pang , Menglun Zhang , Chen Sun
- Applicant: ROFS Microsystem (Tianjin) Co., Ltd
- Applicant Address: CN Tianjin
- Assignee: ROFS Microsystem (Tianjin) Co., Ltd
- Current Assignee: ROFS Microsystem (Tianjin) Co., Ltd
- Current Assignee Address: CN Tianjin
- Agency: Bay State IP, LLC
- Priority: CN 1810141419.7 2018.02.11
- International Application: PCT/CN2019/074534 2019.02.02
- International Announcement: WO2019/154345A 2019.08.15
- Date entered country: 2020-08-11
- Main IPC: H03H9/02
- IPC: H03H9/02 ; H03H3/02 ; H03H9/13 ; H03H9/17

Abstract:
The invention discloses a bulk acoustic wave resonator and a manufacturing method thereof, the bulk acoustic wave resonator comprising: an air gap arranged at the external of the effective piezoelectric region, the air gap being formed between the upper electrode and the piezoelectric layer and/or between the piezoelectric layer and the substrate, and covering the end part, proximal to the air gap, of the lower electrode or connecting to the end part of the lower electrode, wherein the air gap is provided with a first end proximal to the effective piezoelectric region, and at least a portion of the upper surface, starting from the first end, of the air gap is an arch-shaped upper surface. The bulk acoustic wave resonator of the present invention capable of increasing a quality factor (Q) and an effective electromechanical coupling coefficient (K2t,eff) and improving the electrostatic discharge (ESD) immunity.
Public/Granted literature
- US20210050839A1 BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD THEREFOR Public/Granted day:2021-02-18
Information query