Invention Grant
- Patent Title: Semiconductor laser device and analysis apparatus
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Application No.: US16811710Application Date: 2020-03-06
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Publication No.: US11949210B2Publication Date: 2024-04-02
- Inventor: Makoto Matsuhama , Yusuke Awane , Kimihiko Arimoto , Hirotaka Iseki , Shintaro Masuda
- Applicant: HORIBA, LTD.
- Applicant Address: JP Kyoto
- Assignee: Horiba, Ltd.
- Current Assignee: Horiba, Ltd.
- Current Assignee Address: JP
- Agency: Brooks Kushman P.C.
- Priority: JP 19043099 2019.03.08
- Main IPC: H01S5/024
- IPC: H01S5/024 ; G01N33/00 ; H01S5/02325 ; H01S5/02345 ; H01S5/028 ; H01S5/12 ; H01S5/34 ; H01S5/02216

Abstract:
The present invention relates to a semiconductor laser device capable of reducing a measurement error of a temperature detecting element for detecting the temperature of a semiconductor laser element and accurately controlling the temperature of the semiconductor laser element. The semiconductor laser device is used for optical analysis and includes: a semiconductor laser element; a temperature detecting element that detects the temperature of the semiconductor laser element; output terminals that output the output of the temperature detecting element to the outside; wires that electrically connect the temperature detecting element and the output terminals; and a heat capacity increasing part that is provided interposed between the temperature detecting element and output terminal, and the output terminal, and contacts with at least part of the wires to increase the heat capacity of the wires.
Public/Granted literature
- US20200287349A1 SEMICONDUCTOR LASER DEVICE AND ANALYSIS APPARATUS Public/Granted day:2020-09-10
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