Invention Grant
- Patent Title: Temperature calibration with deposition and etch process
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Application No.: US17546769Application Date: 2021-12-09
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Publication No.: US11948818B2Publication Date: 2024-04-02
- Inventor: Zhepeng Cong , Tao Sheng , Vinh N. Tran
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L21/67
- IPC: H01L21/67 ; G01J5/00 ; H01L21/3065
Abstract:
A method and apparatus for calibrating a temperature within a processing chamber are described. The method includes determining an etch rate of a layer within the processing chamber. The processing chamber is a deposition chamber configured for use during semiconductor manufacturing. The etch rate is utilized to determine a temperature within the processing chamber. The temperature within the processing chamber is then subsequently compared to a calibrated temperature to determine a temperature offset. The etch rate is determined using any one of a pyrometer, a reflectometer, a camera, or a mass sensor.
Public/Granted literature
- US20230187240A1 TEMPERATURE CALIBRATION WITH DEPOSITION AND ETCH PROCESS Public/Granted day:2023-06-15
Information query
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