Invention Grant
- Patent Title: Field effect transistor based on graphene nanoribbon and method for making the same
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Application No.: US17206793Application Date: 2021-03-19
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Publication No.: US11948793B2Publication Date: 2024-04-02
- Inventor: Tian-Fu Zhang , Li-Hui Zhang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing; TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN 2011447911.0 2020.12.09
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/04 ; H01L21/78 ; H01L29/06 ; H01L29/16 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/786
Abstract:
A method for making a field effect transistor includes providing a graphene nanoribbon composite structure. The graphene nanoribbon composite structure includes a substrate and a plurality of graphene nanoribbons spaced apart from each other. The substrate includes a plurality of protrusions spaced apart from each other, and one of the plurality of graphene nanoribbons is on the substrate and between two adjacent protrusions. An interdigital electrode is placed on the graphene nanoribbon composite structure, and the interdigital electrode covers the plurality of protrusions and is electrically connected to the plurality of graphene nanoribbons.
Public/Granted literature
- US20220181476A1 FIELD EFFECT TRANSISTOR AND METHOD FOR MAKING THE SAME Public/Granted day:2022-06-09
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