Invention Grant
- Patent Title: Magnon spin valve, magnon sensor, magnon field effect transistor, magnon tunnel junction and magnon memory
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Application No.: US17079422Application Date: 2020-10-24
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Publication No.: US11937513B2Publication Date: 2024-03-19
- Inventor: Xiufeng Han , Ping Tang , Chenyang Guo , Caihua Wan
- Applicant: Institute of Physics, Chinese Academy of Sciences
- Applicant Address: CN Beijing
- Assignee: Institute of Physics, Chinese Academy of Sciences
- Current Assignee: Institute of Physics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: RADLO & SU
- Priority: CN 1711415711.5 2017.12.25
- The original application number of the division: US16225820 2018.12.19
- Main IPC: H10N50/80
- IPC: H10N50/80 ; H01F10/32 ; H10N50/10 ; H10N50/85
Abstract:
The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.
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