Invention Grant
- Patent Title: High voltage transistor structure
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Application No.: US17408846Application Date: 2021-08-23
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Publication No.: US11935950B2Publication Date: 2024-03-19
- Inventor: Po-Yu Chen , Wan-Hua Huang , Jing-Ying Chen , Kuo-Ming Wu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L29/10 ; H01L29/45 ; H01L29/49
Abstract:
A device includes a first buried layer over a substrate, a second buried layer over the first buried layer, a first well over the first buried layer and the second buried layer, a first high voltage well, a second high voltage well and a third high voltage well extending through the first well, wherein the second high voltage well is between the first high voltage well and the third high voltage well, a first drain/source region in the first high voltage well, a first gate electrode over the first well, a second drain/source region in the second high voltage well and a first isolation region in the second high voltage well, and between the second drain/source region and the first gate electrode, wherein a bottom of the first isolation region is lower than a bottom of the second drain/source region.
Public/Granted literature
- US20210384349A1 High Voltage Transistor Structure Public/Granted day:2021-12-09
Information query
IPC分类:
